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SEMICONDUCTOR
HA-2842/883
Wideband, High Slew Rate, High Output Current, Video Operational Amplifier
Description
The HA-2842/883 is a wideband, high slew rate, operational amplifier featuring an outstanding combination of speed, bandwidth, and output drive capability. This amplifier's performance is further enhanced through stable operation down to closed loop gains of +2, the inclusion of offset null controls, and by its excellent video performance. The capabilities of the HA-2842/883 are ideally suited for high speed cable driver circuits, where low closed loop gains and high output drive are required. With a 6MHz full power bandwidth, this amplifier is well suited for high frequency signal conditioning circuits and video amplifiers. Gain flatness of 0.035dB, combined with differential gain and phase specifications of 0.02%, and 0.03 degrees, respectively, make the HA-2842/883 ideal for component and composite video applications. A zener/nichrome based reference circuit, coupled with advanced laser trimming techniques, yields a supply current with a low temperature coefficient and low lot-to-lot variability. For example, the average ICC variation from +85oC to -40oC is <600A (2%),while the standard deviation of the ICC distribution is <0.1mA (0.8%) at +25oC. Tighter ICC control translates to more consistent AC parameters ensuring that units from each lot perform the same way, and easing the task of designing systems for wide temperature ranges.
July 1994
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low AC Variability Over Process and Temperature * Stable at Gains of 2 or Greater * Low Supply Current . . . . . . . . . . . . . . . . . . 15mA (Max) * Gain Bandwidth Product . . . . . . . . . . . . . . 80MHz (Typ) * High Slew Rate . . . . . . . . . . . . . . . . . . . . . 375V/s (Typ) * High Output Current . . . . . . . . . . . . . . . . . 100mA (Min) * Full Power Bandwidth . . . . . . . . . . . . . . . . . 6MHz (Typ) * Low Differential Gain/Phase . . . . . . . 0.02%/0.03o (Typ)
Applications
* Coaxial Cable Drivers * Pulse and Video Amplifiers * Wideband Amplifiers * Fast Sample and Hold Circuits * High Frequency Signal Conditioning Circuits
Ordering Information
PART NUMBER HA1-2842/883 HA7-2842/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC PACKAGE 14 Lead CerDIP 8 Lead CerDIP
Pinouts
HA-2842/883 (CERDIP) TOP VIEW HA-2842/883 (CERDIP) TOP VIEW
NC 1 NC 2 BAL 3 -IN 4 +IN 5 V- 6 NC 7 +
14 NC 13 BAL 12 NC 11 V+ 10 OUT 9 NC 8 NC
BAL -IN +IN V-
1 2 3 4 +
8 7 6 5
BAL V+ OUT NC
NOTE: (NC) No Connection pins may be tied to a ground plane for better isolation and heat dissipation.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright
(c) Harris Corporation 1994
Spec Number
3-230
511088-883 File Number 3622.1
Specifications HA-2842/883
Absolute Maximum Ratings
Voltage between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (40% Duty Cycle) . . . . . . . . . . . . . . . . 125mA Junction Temperature (TJ) (Note 1) . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC 14 Lead CerDIP Package . . . . . . . . . . . . 73oC/W 18oC/W 8 Lead CerDIP Package . . . . . . . . . . . . . 110oC/W 27oC/W Package Power Dissipation Limit at +75oC for TJ +175oC 14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1W 8 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9W Package Power Dissipation Derating Factor Above +75oC 14 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . 11mW/oC 8 Lead CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . 9mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 12V to 15V VINCM 1/2(V+ - V-) RL 1k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage SYMBOL VIO CONDITIONS VCM = 0V GROUP A SUBGROUP 1 2, 3 Input Bias Current +IB VCM = 0V, +RS = 1.1k -RS = 100 1 2, 3 -IB VCM = 0V, +RS = 100 -RS = 1.1k 1 2, 3 Input Offset Current IIO VCM = 0V, +RS = 1.1k -RS = 1.1k 1 2, 3 Common Mode Range +CMR V+ = 5V V- = -25V 1 2, 3 -CMR V+ = 25V V- = -5V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V RL = 1k 4 5, 6 -AVOL VOUT = 0V and -10V RL = 1k VCM = 10V, VOUT = -10V V+ = 5V, V- = -25V VCM = -10V, VOUT = 10V V+ = 25V, V- = -5V 4 5, 6 Common Mode Rejection Ratio +CMRR 1 2, 3 1 2, 3 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN -4 -8 -10 -20 -10 -20 -1 -2 10 10 50 30 50 30 90 85 90 85 MAX 4 8 10 20 10 20 1 2 -10 -10 UNITS mV mV A A A A A A V V V V kV/V kV/V kV/V kV/V dB dB dB dB
-CMRR
Spec Number 3-231
511088-883
Specifications HA-2842/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Output Voltage Swing SYMBOL +VOUT CONDITIONS RL = 1k GROUP A SUBGROUP 1 2, 3 -VOUT RL = 1k 1 2, 3 Output Current +IOUT VOUT = -5V Note 1 1 2, 3 -IOUT VOUT = +5V Note 1 1 2, 3 Quiescent Power Supply Current +ICC VOUT = 0V IOUT = 0mA 1 2, 3 -ICC VOUT = 0V IOUT = 0mA VSUPPLY = 10V V+ = 10V, V- = -15V V+ = 20V, V- = -15V VSUPPLY = 10V V+ = 15V, V- = -10V V+ = 15V, V- = -20V Note 2 Note 2 1 2, 3 Power Supply Rejection Ratio +PSRR 1 2, 3 1 2, 3 1 1 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +25oC MIN 10 10 100 100 -15 -15 70 70 70 70 VIO-1 VIO+1 MAX -10 -10 -100 -100 15 15 UNITS V V V V mA mA mA mA mA mA mA mA dB dB dB dB mV mV
-PSRR
Offset Voltage Adjustment
+VIOAdj +VIOAdj
NOTES: 1. Maximum power dissipation, including output load conditions, must be designed to maintain the maximum junction temperature below +175oC. For a 100mA load and a +125oC ambient, heat sinking is required. 2. Offset Adjustment range is VIO (measured) 1mV minimum referred to output. This test is for functionality only, to assure adjustment through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3.
Spec Number 3-232
511088-883
Specifications HA-2842/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 1k, VOUT = 0V, AV = +2V/V, Unless Otherwise Specified. LIMITS PARAMETERS Gain Bandwidth Product SYMBOL GBWP CONDITIONS VO = 200mV, fO = 100kHz VO = 200mV, fO = 10MHz Slew Rate +SR VO = -5V to +5V NOTES 1 TEMPERATURE +25oC MIN 60 MAX UNITS MHz
1
+25oC
70
-
MHz
1, 3 1, 3
+25oC, -55oC +125oC +25oC, -55oC +125oC +25oC, -55oC +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC
350 300 350 300 5.5 4.7 -
5 7 5 5 50 55 50 55
V/s V/s V/s V/s MHz MHz ns ns ns ns % % % %
-SR
VO = +5V to -5V
1, 3 1, 3
Full Power Bandwidth
FPBW
VPEAK = +10V
1, 2 1, 2
Rise Time
TR
VO = 0V to +200mV CL 10pF
1, 3 1, 3
Fall Time
TF
VO = 0V to -200mV CL 10pF
1, 3 1, 3
Overshoot
+OS
VO = 0V to +200mV
1 1
-OS
VO = 0V to -200mV
1 1
NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variations. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Measured between 10% and 90% points.
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C & D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 1), 2, 3, 4, 5, 6 1, 2, 3, 4, 5, 6 1
Spec Number 3-233
511088-883
HA-2842/883 Die Characteristics
DIE DIMENSIONS: 77 x 81 x 19 mils 1 mils 1960 x 2060 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride over Silox Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 1.83 x 105 A/cm2 at 56mA SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 58 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2842/883
BAL BAL
-IN
V+
OUT
+IN
V-
Spec Number 3-234
511088-883
HA-2842/883 Test Circuit
(Applies to Table 1)
V+ S7A 1 1K BAL ADJ S1 S2 OPEN 1K 1 1 2 1 S6A DUT + OPEN 1 1K S5 2 AC OUT 1 S8 2 OPEN 3 1 S9 2 V2 10K 100K + 0.1 S7B 2 1 2 1 2 1 2 1 2K 100K 2K 100K 100K -1 V1
FOR LOOP STABILITY, USE MIN VALUE CAPACITOR TO PREVENT OSCILLATION
OPEN
2
OPEN
2
-
FB
1 S6B 2 OPEN
V100 100 0.1 1
EOUT 10K BUFFER ALL RESISTORS = 1% () ALL CAPACITORS = 10% (F)
Test Waveforms
SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL RESPONSE (Applies to Table 3)
VIN 50
VOUT 500 500
VS = 15V AV = +2 CL 10pF
MEASURED LARGE SIGNAL RESPONSE Vertical Scale: Input = 5V/Div., Output = 5V/Div. Horizontal Scale: 50ns/Div.
INPUT INPUT
OUTPUT
+
-
MEASURED SMALL SIGNAL RESPONSE Vertical Scale: Input = 100mV/Div., Output = 100mV/Div. Horizontal Scale: 50ns/Div.
OUTPUT
Spec Number 3-235
511088-883
HA-2842/883 Burn-In Circuits
HA1-2842/883 CERAMIC DIP
1 2 R2 3 4 R3 VC2 D2 5 6 7
14 13 12 R1
+
-
11 10 9 8 D1 C1 V+
HA7-2842/883 CERAMIC DIP
R1
R2
1 2
8
R3 VC2 D2
3 4
+
-
7 6 5 D1 C1
V+
NOTES: 1. R1 = 1M, 5%, 1/4W (Min) 2. R2 = 100k, 5%, 1/4W (Min) = R3 3. C1 = C2 = 0.01F/Socket (Min) or 0.1F/Row, (Min) 4. D1 = D2 = 1N4002 or Equivalent/Board 5. (V+) - (V-) = 31V 1V
Spec Number 3-236
511088-883
HA-2842/883 Schematic Diagram
BAL V+ BAL
R1 1.2K QP1 R2 300K QP4
R3 600 R6 5K R7 5K QN4
R13 112
R15 5K
R17 5K
R18 112
R21 200
R22 200
QP13 QP16 QP7 QP8 QP9 QP10 QP14
QP2 QP6
QP12
C1 2pF QP5 QN2 QN24
R24 10 +IN QN7 QN10 -IN QN19
VOUT R11 820 R4 10K QP15 QP17 R25 10
QP18 QN1
DZ1
QN15
QN17
QN22 QN5 QN13 QP3 R8 5K QN8 QN11 QN14 QN16 QN18 QN20
QN6 QN9 QN12 QP11 R5 560 VR9 5K R10 170 R12 170 R14 170 R16 2k R19 167 R20 167 R23 100 QN21
QN3
QN23
Spec Number 3-237
511088-883
HA-2842/883 Packaging
c1 -A-DBASE METAL E b1 M -Bbbb S BASE PLANE SEATING PLANE S1 b2 b ccc M C A-B S AA C A-B S D Q -CA L DS M (b) SECTION A-A (c) LEAD FINISH
F8.3A MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A)
8 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE INCHES SYMBOL A b b1 b2 b3 c c1 MIN 0.014 0.014 0.045 0.023 0.008 0.008 0.220 MAX 0.200 0.026 0.023 0.065 0.045 0.018 0.015 0.405 0.310 MILLIMETERS MIN 0.36 0.36 1.14 0.58 0.20 0.20 5.59 MAX 5.08 0.66 0.58 1.65 1.14 0.46 0.38 10.29 7.87 2.54 BSC 7.62 BSC 3.81 BSC 3.18 0.38 0.13 0.13 90o 8 5.08 1.52 105o 0.38 0.76 0.25 0.038 NOTES 2 3 4 2 3 5 5 6 7 2 8
eA
D E e eA eA/2 L Q S1 S2
0.100 BSC 0.300 BSC 0.150 BSC 0.125 0.015 0.005 0.005 90o 8 0.200 0.060 105o 0.015 0.030 0.010 0.0015
e
DS
eA/2
c
aaa M C A - B S D S
NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b1. 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling Dimension: Inch. 11. Lead Finish: Type A. 12. Material: Compliant to MIL-I-38535.
aaa bbb ccc M N
F14.3 MIL-STD-1835 GDIP1-T14 (D-1, CONFIGURATION A)
14 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE INCHES SYMBOL A b b1 b2 b3 c c1 D E e eA eA/2 L Q S1 S2 MIN 0.014 0.014 0.045 0.023 0.008 0.008 0.220 MAX 0.200 0.026 0.023 0.065 0.045 0.018 0.015 0.785 0.310 MILLIMETERS MIN 0.36 0.36 1.14 0.58 0.20 0.20 5.59 MAX 5.08 0.66 0.58 1.65 1.14 0.46 0.38 19.94 7.87 2.54 BSC 7.62 BSC 3.81 BSC 3.18 0.38 0.13 0.13 90o 14 5.08 1.52 105o 0.38 0.76 0.25 0.038 NOTES 2 3 4 2 3 5 5 6 7 2 8
0.100 BSC 0.300 BSC 0.150 BSC 0.125 0.015 0.005 0.005 90o 14 0.200 0.060 105o 0.015 0.030 0.010 0.0015
aaa bbb ccc M N
Spec Number 3-238
511088-883
SEMICONDUCTOR
HA-2842
Wideband, High Slew Rate High Output Current, Operational Amplifier
VSUPPLY = 15V, AV = +2, RL = 1k, CL < 10pF, TA = +25oC, Unless Otherwise Specified. GAIN BANDWIDTH PRODUCT vs SUPPLY VOLTAGE
100
DESIGN INFORMATION
July 1995
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
120 100 80 60 GAIN (dB) 40 20 0 OPEN LOOP
FREQUENCY RESPONSE FOR VARIOUS GAINS
AVCL = 1000 AVCL = 100 PHASE (DEGREES) AVCL = 10 AVCL = 2 GAIN BANDWIDTH PRODUCT (MHz)
90 80 70 60 50 40 30 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE (V) 13 14 15
0 90 AVCL = 1000 OPEN LOOP AVCL = 10 AVCL = 2 10M 100M
180
AVCL = 100 10K 100K 1M
10
100
1K
FREQUENCY (Hz)
GAIN BANDWIDTH PRODUCT vs TEMPERATURE
100 90 100 GAIN BANDWIDTH PRODUCT (MHz) 80 90 CMRR (dB) 70 60 50 40 30 -60 60 50 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 100 1K TEMPERATURE (oC) 80 70 110
CMRR vs FREQUENCY
10K
100K
1M
10M
FREQUENCY (Hz)
Spec Number 3-239
511088-883
HA-2842
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
PSRR vs FREQUENCY
VSUPPLY = 15V, AV = +2, RL = 1k, CL < 10pF, TA = +25oC, Unless Otherwise Specified. INPUT NOISE vs FREQUENCY
50 20
90 80 PSRR (dB) 70 60 50 40 30 20 10 1K 10K 100K FREQUENCY (Hz) 1M 10M NOISE VOLTAGE (nV/Hz)
40
16 NOISE CURRENT (pA/Hz) 15 15
30
12
20
NOISE VOLTAGE
8
10
4
0
NOISE CURRENT
0
10
100
1K FREQUENCY (Hz)
10K
100K
SLEW RATE vs TEMPERATURE
425 450
SLEW RATE vs SUPPLY VOLTAGE
400 SLEW RATE (V/s) SLEW RATE (V/s) 400
350
375
300
350
250
200 5 -60 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC) 6 7 8 9 10 11 SUPPLY VOLTAGE (V) 12 13 14
INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT vs TEMPERATURE
8 3 16
SUPPLY CURRENT vs SUPPLY VOLTAGE
INPUT OFFSET VOLTAGE (mV)
7 INPUT BIAS CURRENT (A)
OFFSET VOLTAGE
14 2 SUPPLY CURRENT (mA)
12
6
1
10
+125oC
5 BIAS CURRENT 4
0
8
+25oC
-1
6
-55oC
3 -60
-40
-20
0
-2 +20 +40 +60 +80 +100 +120 +140 oC) TEMPERATURE (
4 5 6 7 8 9 10 11 12 SUPPLY VOLTAGE (V) 13 14
Spec Number 3-240
511088-883
HA-2842
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
15 15V, 1k 12.5 POSITIVE OUTPUT SWING (V) 15V, 150
VSUPPLY = 15V, AV = +2, RL = 1k, CL < 10pF, TA = +25oC, Unless Otherwise Specified. NEGATIVE OUTPUT SWING vs TEMPERATURE
-2.5 8V, 75 8V, 150 NEGATIVE OUTPUT SWING (V) -5 8V, 1k
POSITIVE OUTPUT SWING vs TEMPERATURE
15V, 75
10
-7.5 15V, 75 15V, 150 -10
7.5
8V, 1k
8V, 150
8V, 75
5
-12.5 15V, 1k
2.5 -60
-40
-20
0
+20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC)
-15 -60
-40
-20
0
+20 +40 +60 +80 +100 +120 +140 TEMPERATURE (oC)
MAXIMUM UNDISTORTED OUTPUT SWING vs FREQUENCY
30 OUTPUT VOLTAGE SWING (VP-P) 25 20 15 10 -80 5 -90 0 VSUPPLY = 15V -50 THD (dBc) -40
TOTAL HARMONIC DISTORTION vs FREQUENCY
-60
VSUPPLY = 8V
-70
VO = 10VP-P VO = 2VP-P VO = 1VP-P VO = 0.5VP-P
1K
10K
100K 1M FREQUENCY (Hz)
10M
100M
100K
1M FREQUENCY (Hz)
10M
INTERMODULATION DISTORTION vs FREQUENCY (TWO TONE)
-40
DIFFERENTIAL GAIN vs LOAD RESISTANCE
0.025
THIRD INTERMOD PRODUCT (dBc)
-50
VO = 5VP-P VO = 2VP-P DIFFERENTIAL GAIN (%)
0.020
VSUPPLY = 8V
-60
0.015
-70
0.010 VSUPPLY = 15V 0.005 VSUPPLY = 10V
-80 VO = 1VP-P -90 VO = 0.50VP-P VO = 0.25VP-P 500K 1M 10M
FREQUENCY (Hz)
0 100
200
300
400 500 600 700 800 LOAD RESISTANCE ()
900 1000
Spec Number 3-241
511088-883
HA-2842
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied.
Typical Performance Curves
0.14
VSUPPLY = 15V, AV = +2, RL = 1k, CL < 10pF, TA = +25oC, Unless Otherwise Specified. GAIN FLATNESS vs FREQUENCY (AVCL = 2)
0.04 RL = 75 0.03
DIFFERENTIAL PHASE vs LOAD RESISTANCE
DIFFERENTIAL PHASE (DEGREES)
0.12
0.10
0.08 VSUPPLY = 10V 0.06
GAIN FLATNESS (dB)
VSUPPLY = 8V
0.02 RL = 150 0.01 RL = 500 RL = 1000 0
0.04
VSUPPLY = 15V
0.02 0 100 200 300 400 500 600 700 LOAD RESISTANCE () 800 900 1000
0
1M
2M
3M
4M 5M 6M 7M FREQUENCY (Hz)
8M
9M
10M
GAIN BANDWIDTH PRODUCT vs LOAD RESISTANCE
85 GAIN BANDWIDTH PRODUCT (MHz)
80
75
70
65 0 100 200 300 400 500 600 700 LOAD RESISTANCE () 800 900 1000
SUGGESTED OFFSET VOLTAGE ADJUSTMENT
V+
5K + OUT -
V-
Spec Number 3-242
511088-883
HA-2842
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied.
TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RL = 1k, CL 10pF, Unless Otherwise Specified. PARAMETERS Input Offset Voltage Average Offset Voltage Drift Input Bias Current Input Offset Current Differential Input Resistance Input Noise Voltage Input Noise Voltage Density Input Noise Current Density Large Signal Voltage Gain fO = 10Hz to 1MHz fO = 1000Hz fO = 1000Hz VOUT = 10V VCM = 0V Versus Temperature VCM = 0V VCM = 0V CONDITIONS TEMPERATURE +25oC Full +25oC +25oC +25oC +25oC +25oC +25oC +25oC Full CMRR Gain Bandwidth Product Output Voltage Swing Output Current Output Resistance Full Power Bandwidth Slew Rate Rise and Fall Time Overshoot PSRR Supply Current Differential Gain Differential Phase Gain Flatness to 10MHz VCM = 10V f = 10MHz RL = 1k VOUT > 10V Open Loop FPBW = SR/2VP, VP = 10V VOUT = 5V, AV = +2 VOUT = 100mV, AV = +2 VOUT = 100mV, AV = +2 Delta VS = 10V to 20V No Load RL = 700 RL = 700 RL = 75 Full +25oC Full Full +25oC +25oC +25oC +25oC +25oC Full Full +25oC +25oC +25oC TYPICAL 1 13 5.0 0.5 170 16 16 2 100 60 110 80 11 120 8.5 6.0 375 3.5 20 80 14.2 0.02 0.03 0.035 UNITS mV V/oC A A k VRMS nV/Hz pA/Hz kV/V kV/V dB MHz V mA MHz V/s ns % dB mA % Degrees dB
Spec Number 3-243
511088-883

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